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A major part
of the research activity of the radiation detection group involves the
design, simulation, characterisation and fabrication of silicon
radiation sensors. This work is largely linked with the development
of the ATLAS
Semiconductor Tracker (SCT) at CERN. In collaboration with IFIC
Valencia, CNM is resposible for producing 60m2 of silicon detectors
for the SCT. A particular focus of the work is to increase the radiation
hardness of silicon detectors. This involves oxygen doping by diffusion
into high resisitivity FZ silicon and experiments on device degradation
under irradiation.
In addition
to the SCT detectors, under a European Community access to research infrastructure
programme (Microserv),
CNM is involved in the design and fabrication of pad, strip and pixel
silicon radiation detectors for various institutions across Europe, using
P-on-N and N-on-P technologies.
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